The aim of the cooperation project ETNA (Energy efficiency Through Novel AlGaN/GaN heterostructures) has been the development and study of novel enabling processes for high-energy-efficiency electronic devices based on gallium nitride (GaN). In particular, the research activity was focused on key technologies, such as high electron mobility transistors (HEMTs), vertical devices based on GaN, and advanced transistors integrating graphene with nitrides.
As emphasized by Dr. Fabrizio Roccaforte (CNR-IMM), "the introduction of new devices concepts based on nitride materials in power- and high-frequency electronics, as well as in optoelectronics and solid-state lighting, is one of the main routes towards a global reduction of the energy consumption".
”Our collaboration dates back in 2010 – continues Prof. Mike Leszczynski (Unipress-PAS) – first with the European Project Last Power, and then with the FlagEra Project GraNitE. Meanwhile, the interaction between the two institutes has been supported by the CNR-PAS Agreement, under the bilateral project ETNA”.
In this collaboration, a great attention has been put on the training of young PhD Students and Post-Doc Researchers, through an intensive exchange of visits finalized to the mutual transfer of knowledge. Such a long-standing cooperation resulted in the publication of several papers in international journals, as well as a referece book on Nitride Semiconductor Technology published by Wiley in 2020.

Details: Dr. Fabrizio Roccaforte, Istituto per la Microelettronica Microsistemi CNR (IMM, Italy)
Cooperation: Prof. Mike Leszczynski (Unipress-PAS, Poland)
Project’s title: Energy efficiency Through Novel AlGaN/GaN heterostructures (ETNA)